- Hersteller :
- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
6 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
2,656
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 800V 2.1Ohm typ 3A Zener-protected | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.5 Ohms | 3 V | 10.5 nC | Enhancement | ||
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Ein Angebot |
2,315
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 400 Volt 3.0 A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 3 A | 1.8 Ohms | Enhancement | ||||
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siehe | STMicroelectronics | MOSFET N-Ch 620V 3.0 Ohm 3.0A IPAK | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 620 V | 3 A | 3 Ohms | |||||||||
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siehe | Taiwan Semiconductor | MOSFET 600V, 4A, 1.4OHMS N Channel Power Mosfet | +/- 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 600 V | 3 A | 1 Ohms | 2 V | 7.12 nC | Enhancement | ||||
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siehe | STMicroelectronics | MOSFET N-Ch, 500V-2.4ohms Zener SuperMESH 3A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 2.7 Ohms | Enhancement | |||||
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Ein Angebot |
2,847
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch, 800V-3ohms Zener SuperMESH 3A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 3.5 Ohms | 22.5 nC | Enhancement |
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