- Hersteller :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
1,316
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 500V N-Chan MOSFET UniFET-II | 25 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 2.1 Ohms | 5 V | 6.2 nC | UniFET | ||
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Ein Angebot |
468
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 600V 0.049 Ohm 55A MDmesh II FET | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 3 A | 48 mOhms | 4 V | 130 nC |
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