- Mounting Style :
- Package / Case :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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siehe | Taiwan Semiconductor | MOSFET 600V, 4A, 1.4OHMS N Channel Power Mosfet | +/- 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 600 V | 3 A | 1 Ohms | 2 V | 7.12 nC | Enhancement | |||
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siehe | Taiwan Semiconductor | MOSFET 600V, 4A, 1.4OHMS N Channel Power Mosfet | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 600 V | 3 A | 1 Ohms | 2 V | 7.12 nC | Enhancement |
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