- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
14 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
615
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET SuperFET2 650V, 110mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 5 V | 98 nC | Enhancement | SuperFET II FRFET | |||
|
Ein Angebot |
903
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 78 mOhms | ||||||||||
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Ein Angebot |
2,007
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 100 Volt 35 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 38 mOhms | Enhancement | ||||||
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Ein Angebot |
577
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 70V 35A OmniFET | Through Hole | TO-220-3 | Tube | Si | N-Channel | 70 V | 35 A | 28 mOhms | |||||||||||
|
Ein Angebot |
308
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 78 mOhms | ||||||||||
|
Ein Angebot |
1,241
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFT 150V 34A 41mOhm 26nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 35 A | 32 mOhms | 26 nC | ||||||||
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Ein Angebot |
1,318
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 35A 55V N-Channel UltraFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 35 A | 34 mOhms | Enhancement | UltraFET | |||||
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Ein Angebot |
1,089
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 20a 60V N-Channel 0.037Ohm | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 35 A | 25 mOhms | Enhancement | UltraFET | |||||
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Ein Angebot |
481
Verfügbar auf Lager
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Infineon Technologies | MOSFET Audio MOSFT 150V 34A 41mOhm 26nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 35 A | 32 mOhms | 26 nC | ||||||||
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Ein Angebot |
648
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 150V 35a .42 Ohms/VGS=1V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 35 A | 80 mOhms | Enhancement | PowerTrench | |||||
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Ein Angebot |
80
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFET, 100V, 30A, 1 TO-220 Fullpack | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 35 A | 10.7 mOhms | 4 V | 54 nC | ||||||||
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Ein Angebot |
200
Verfügbar auf Lager
|
Toshiba | MOSFET N-Ch MOS 55A 80V 72W 0.0122 Ohm | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 100 V | 35 A | 12.2 mOhms | |||||||||||
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siehe | Nexperia | MOSFET RAIL PWR-MOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 35 A | 70 mOhms | Enhancement | |||||||
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Ein Angebot |
3,708
Verfügbar auf Lager
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Nexperia | MOSFET RAIL PWR-MOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 35 A | 35 mOhms | Enhancement |
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