- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 10 mOhms (1)
- 10.5 mOhms (1)
- 10.7 mOhms (1)
- 100 mOhms (1)
- 110 mOhms (2)
- 12.2 mOhms (1)
- 12.6 mOhms (1)
- 140 mOhms (1)
- 150 mOhms (1)
- 22.5 mOhms (1)
- 25 mOhms (2)
- 28 mOhms (1)
- 32 mOhms (2)
- 320 mOhms (1)
- 34 mOhms (1)
- 35 mOhms (1)
- 38 mOhms (1)
- 380 mOhms (1)
- 52 mOhms (1)
- 65 mOhms (2)
- 67 mOhms (2)
- 68 mOhms (2)
- 70 mOhms (1)
- 78 mOhms (3)
- 79 mOhms (2)
- 80 mOhms (3)
- 88 mOhms (3)
- 90 mOhms (1)
- 92 mOhms (4)
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
45 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
615
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SuperFET2 650V, 110mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 5 V | 98 nC | Enhancement | SuperFET II FRFET | |||
|
Ein Angebot |
437
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 79 mOhms | 5 V | 139 nC | SuperFET | ||||||
|
Ein Angebot |
651
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 600V 0.075 Ohm 35A FDmesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | 145 nC | Enhancement | |||||
|
Ein Angebot |
903
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 78 mOhms | ||||||||||
|
Ein Angebot |
327
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 52 mOhms | 3 V | 68 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
585
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 650 V 0.067 Ohm 35 A MDmesh(TM) | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 67 mOhms | 4 V | 82 nC | Enhancement | MDmesh | |||
|
Ein Angebot |
254
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-3PF-3 | + 150 C | 1 Channel | Si | N-Channel | 650 V | 35 A | 67 mOhms | 3 V | 82 nC | Enhancement | ||||||
|
Ein Angebot |
2,007
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 100 Volt 35 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 38 mOhms | Enhancement | ||||||
|
Ein Angebot |
1,357
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 25 mOhms | Enhancement | QFET | |||||
|
Ein Angebot |
577
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 70V 35A OmniFET | Through Hole | TO-220-3 | Tube | Si | N-Channel | 70 V | 35 A | 28 mOhms | |||||||||||
|
Ein Angebot |
224
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SuperFET2 650V, 110 mOhm, FRFET | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 5 V | 98 nC | Enhancement | ||||
|
Ein Angebot |
124
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 600V, 35A FDMesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | Enhancement | ||||||
|
Ein Angebot |
205
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS | Through Hole | TO-247-3 | Tube | Si | N-Channel | 650 V | 35 A | 78 mOhms | |||||||||||
|
Ein Angebot |
308
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 78 mOhms | ||||||||||
|
Ein Angebot |
1,241
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 150V 34A 41mOhm 26nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 35 A | 32 mOhms | 26 nC | ||||||||
|
Ein Angebot |
1,318
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 35A 55V N-Channel UltraFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 35 A | 34 mOhms | Enhancement | UltraFET | |||||
|
Ein Angebot |
1,089
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 20a 60V N-Channel 0.037Ohm | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 35 A | 25 mOhms | Enhancement | UltraFET | |||||
|
Ein Angebot |
481
Verfügbar auf Lager
|
Infineon Technologies | MOSFET Audio MOSFT 150V 34A 41mOhm 26nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 35 A | 32 mOhms | 26 nC | ||||||||
|
Ein Angebot |
648
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 150V 35a .42 Ohms/VGS=1V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 35 A | 80 mOhms | Enhancement | PowerTrench | |||||
|
Ein Angebot |
374
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 12.6 mOhms | 9 nC | Enhancement | OptiMOS | ||||
|
Ein Angebot |
24
Verfügbar auf Lager
|
IXYS | MOSFET 35 Amps 600V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 90 mOhms | 3 V | 60 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
80
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFET, 100V, 30A, 1 TO-220 Fullpack | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 35 A | 10.7 mOhms | 4 V | 54 nC | ||||||||
|
Ein Angebot |
2,798
Verfügbar auf Lager
|
Wolfspeed / Cree | MOSFET 1000V 65 mOhm G3 SiC MOSFET TO-247-4 | - 4 V, + 15 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1000 V | 35 A | 65 mOhms | 1.8 V | 35 nC | Enhancement | ||||
|
Ein Angebot |
360
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET Nch 600V 35A Si MOSFET | 20 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 92 mOhms | 3 V | 72 nC | Enhancement | ||||
|
Ein Angebot |
450
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET Nch 600V 35A Si MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 92 mOhms | 3 V | 72 nC | Enhancement | ||||
|
Ein Angebot |
23
Verfügbar auf Lager
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 35 A | 380 mOhms | 4 V | 305 nC | Enhancement | ||||||
|
siehe | Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 35 A | 320 mOhms | 2.5 V | 305 nC | Enhancement | ||||||
|
Ein Angebot |
60
Verfügbar auf Lager
|
Toshiba | MOSFET MOSFET NChtrr130ns 0.08ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 35 A | 80 mOhms | 3 V to 4.5 V | 115 nC | Enhancement | |||||
|
Ein Angebot |
12
Verfügbar auf Lager
|
Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 35 A | 140 mOhms | 5 V | 72 nC | Enhancement | POWER MOS 7 | ||||
|
Ein Angebot |
785
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 35A, 600V SuperFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 79 mOhms | 5 V | 139 nC | Enhancement | SuperFET |
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