- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
10 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
437
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 79 mOhms | 5 V | 139 nC | SuperFET | ||||||
|
Ein Angebot |
651
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 600V 0.075 Ohm 35A FDmesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | 145 nC | Enhancement | |||||
|
Ein Angebot |
327
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 52 mOhms | 3 V | 68 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
124
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 600V, 35A FDMesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | Enhancement | ||||||
|
Ein Angebot |
24
Verfügbar auf Lager
|
IXYS | MOSFET 35 Amps 600V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 90 mOhms | 3 V | 60 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
360
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET Nch 600V 35A Si MOSFET | 20 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 92 mOhms | 3 V | 72 nC | Enhancement | ||||
|
Ein Angebot |
450
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET Nch 600V 35A Si MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 92 mOhms | 3 V | 72 nC | Enhancement | ||||
|
siehe | ROHM Semiconductor | MOSFET 10V Drive Nch MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 600 V | 35 A | 92 mOhms | 2 V | 110 nC | Enhancement | |||||
|
siehe | ROHM Semiconductor | MOSFET 10V Drive Nch MOSFET | 20 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 600 V | 35 A | 92 mOhms | 2 V | 110 nC | Enhancement | |||||
|
siehe | STMicroelectronics | MOSFET N-channel 600V Power MDmesh | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | Enhancement |
1 / 1 Seite