- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
973
Verfügbar auf Lager
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IXYS | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 100 mOhms | 5 V | 96 nC | HyperFET | |||||
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Ein Angebot |
60
Verfügbar auf Lager
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IXYS | MOSFET 60 Amps 500V | Through Hole | PLUS-247-3 | Tube | Si | N-Channel | 500 V | 60 A | 100 mOhms | ||||||||||
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Ein Angebot |
25
Verfügbar auf Lager
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IXYS | MOSFET 60 Amps 500V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 60 A | 100 mOhms | 4.5 V | 610 nC | Enhancement | LinearL2 | |||
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Ein Angebot |
39
Verfügbar auf Lager
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IXYS | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 100 mOhms | 5 V | 96 nC | HyperFET | |||||
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siehe | IXYS | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 100 mOhms | 5 V | 96 nC | HyperFET |
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