- Hersteller :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
671
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | CoolMOS | ||
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Ein Angebot |
1
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | CoolMOS | ||
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Ein Angebot |
31
Verfügbar auf Lager
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IXYS | MOSFET 60 Amps 200V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 60 A | 40 mOhms | |||||||||
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Ein Angebot |
1,019
Verfügbar auf Lager
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Wolfspeed / Cree | MOSFET SiC Power MOSFET 1200V, 60A | - 10 V, + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 60 A | 40 mOhms | 2.8 V | 283 nC | Enhancement | |||
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siehe | Infineon Technologies | MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | CoolMOS |
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