- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
9 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
6,122
Verfügbar auf Lager
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Diodes Incorporated | MOSFET BSS Family,SC59 Family,SC59,3K | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 50 mA | 160 Ohms | 1.08 nC | Enhancement | |||
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Ein Angebot |
261
Verfügbar auf Lager
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Microchip Technology | MOSFET 500V 60Ohm | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 500 V | 50 mA | 60 Ohms | Enhancement | ||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 500 V | 50 mA | 45 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 50 mA | 45 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 50 mA | 45 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 500 V | 50 mA | 45 Ohms | Enhancement | ||||||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 50 mA | 45 Ohms | Enhancement | |||||
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siehe | Advanced Linear Devices | MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY | Through Hole | PDIP-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 50 mA | 25 Ohms | Enhancement | ||||||
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siehe | Advanced Linear Devices | MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY | Through Hole | PDIP-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 50 mA | 25 Ohms | Enhancement |
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