- Hersteller :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
706
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFT 55V 133A 5.3mOhm 170nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 133 A | 5.3 mOhms | 170 nC | ||||||||
|
Ein Angebot |
105
Verfügbar auf Lager
|
IXYS | MOSFET 133 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 133 A | 9 mOhms | 5 V | 235 nC | Enhancement | Polar, HiPerFET |
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