Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Package / Case :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
2 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IRF1405PBF
1+
$0.9040
10+
$0.7680
100+
$0.6160
500+
$0.5360
Ein Angebot
RFQ
706
Verfügbar auf Lager
Infineon Technologies MOSFET MOSFT 55V 133A 5.3mOhm 170nC 20 V Through Hole TO-220-3     Tube 1 Channel Si N-Channel 55 V 133 A 5.3 mOhms   170 nC    
IXFR200N10P
1+
$4.8560
10+
$4.4640
25+
$4.2800
100+
$3.7720
Ein Angebot
RFQ
105
Verfügbar auf Lager
IXYS MOSFET 133 Amps 100V 0.0075 Rds 20 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 133 A 9 mOhms 5 V 235 nC Enhancement Polar, HiPerFET