- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
17,026
Verfügbar auf Lager
|
Infineon / IR | MOSFET P-CHANNEL -20V -6.9A 32mOhm -2.5V capable | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.9 A | 55 mOhms | |||||||
|
|
Ein Angebot |
9,653
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 30V PCH DUAL POWER TRENCH M | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 6.9 A | 18 mOhms | Enhancement | PowerTrench | ||||
|
|
|
Ein Angebot |
5,973
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 6.9 A | 0.048 Ohms | - 2.5 V | 11.3 nC | Enhancement | |||
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|
Ein Angebot |
2,343
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET PMOS-DUAL | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 6.9 A | 45 mOhms | - 2.1 V | 6.8 nC | Enhancement |
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