- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
11,665
Verfügbar auf Lager
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Infineon Technologies | MOSFET P-Ch DPAK-2 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 390 mA, - 390 mA | 700 mOhms, 700 mOhms | - 1.2 V, - 1.2 V | - 620 pC, - 620 pC | Enhancement | ||
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Ein Angebot |
4,915
Verfügbar auf Lager
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Infineon Technologies | MOSFET P-Ch | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 390 mA, - 390 mA | 700 mOhms, 700 mOhms | - 1.2 V, - 1.2 V | - 620 pC, - 620 pC | Enhancement |
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