- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
4,900
Verfügbar auf Lager
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | DirectFET-MF | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 40 V | 159 A | 1.4 mOhms | 2.2 V | 161 nC | Enhancement | StrongIRFET | |||
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|
Ein Angebot |
3,557
Verfügbar auf Lager
|
Infineon / IR | MOSFET 40V 85A 2.4mOhm 92nC STrongIRFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 159 A | 2.7 mOhms | 3.9 V | 92 nC | Enhancement | StrongIRFET | ||
|
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Ein Angebot |
4,800
Verfügbar auf Lager
|
Nexperia | MOSFET HIGH PERF TRENCHMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 159 A | 5.6 mOhms | Enhancement | |||||
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Ein Angebot |
1,500
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET SO8FL 30V 138A 2.1MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 159 A | 1.4 mOhms | 1.3 V | 45.2 nC | Enhancement |
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