- Hersteller :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
9,067
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.7 A | 30 mOhms | 1.7 V | 6 nC | Enhancement | |||
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Ein Angebot |
2,360
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 600V 6.7A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.7 A | 650 mOhms | 4 V | 12 nC | CoolMOS | |||
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Ein Angebot |
2,065
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 650V 6.7A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6.7 A | 650 mOhms | 3 V | 21 nC | CoolMOS | |||
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Ein Angebot |
1,632
Verfügbar auf Lager
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Diodes Incorporated | MOSFET N-Chan 60V MOSFET (UMOS) | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 6.7 A | 50 mOhms | Enhancement | |||||
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Ein Angebot |
883
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 30V N Chnl UMOS | 20 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.7 A | 35 mOhms | 1 V | 26.8 nC | Enhancement |
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