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| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
724
Verfügbar auf Lager
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Diodes Incorporated | MOSFET Comp ENH FET 40VDs 20Vgs 1.3W | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | -40 V, 40 V | - 5.1 A, 7 A | 24 mOhms, 45 mOhms | - 3 V, 3 V | 8.8 nC, 21.5 nC | Enhancement |
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