- Hersteller :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,611
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET UDFN6 30V 8.7A | 12 V, 12 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.3 A, 7.3 A | 17.5 mOhms, 17.5 mOhms | 600 mV, 600 mV | 9 nC, 9 nC | Enhancement | ||
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Ein Angebot |
2,981
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Ch 30V Dual Enh 20Vgss 1.1W 1115pF | 20 V, 20 V | SMD/SMT | V-DFN3030-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.3 A, 7.3 A | 24 mOhms, 24 mOhms | 1.4 V, 1.4 V | 25.1 nC, 25.1 nC | Enhancement |
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