- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
13
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual EPAD(R) N-Ch | 10.6 V, 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 12 mA, 12 mA | 500 Ohms, 500 Ohms | - 10 mV | Depletion | |||
|
Ein Angebot |
35
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual EPAD(R) N-Ch | 10.6 V, 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 12 mA, 12 mA | 500 Ohms, 500 Ohms | - 20 mV | Depletion |
1 / 1 Seite