- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
8 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
12,192
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET P-Channel 20V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 0.08 Ohms | - 1.5 V | 8 nC | Enhancement | TrenchFET | |||
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
ON Semiconductor | MOSFET INTEGRATED POWER BJT | - 35 V | SMD/SMT | DFN-8 | Reel | Si | P-Channel | - 20 V | - 3.9 A | 200 Ohms | ||||||||||
|
Ein Angebot |
2,440
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET Dl 60V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 3.9 A | 125 mOhms | Enhancement | ||||||
|
Ein Angebot |
2,462
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 100V P-Ch MOSFET 20V VGS -11.3A IDM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.9 A | 350 mOhms | Enhancement | ||||||
|
Ein Angebot |
729
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 3.9 A | 125 mOhms | - 1 V | 24.2 nC | Enhancement | ||||
|
Ein Angebot |
1,041
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 TSOT23,3K | 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.9 A | 75 mOhms | 19.8 nC | Enhancement | |||||
|
Ein Angebot |
11,841
Verfügbar auf Lager
|
Toshiba | MOSFET Small-Signal MOSFET | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 240 mOhms | - 1 V | 4.6 nC | Enhancement | ||||
|
Ein Angebot |
23,997
Verfügbar auf Lager
|
Nexperia | MOSFET P-CH TRENCH 20V | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 58 mOhms | Enhancement |
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