- Hersteller :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
8,942
Verfügbar auf Lager
|
Nexperia | MOSFET TAPE13 MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11.8 A | 10.5 mOhms | Enhancement | |||||
|
|
Ein Angebot |
333
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 11.8 A | 150 mOhms | Enhancement | QFET | ||||
|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET U8FL 30V 41A 8MOHM | SMD/SMT | WDFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 11.8 A | 13.5 mOhms | 2.2 V | 8 nC | |||||||
|
|
Ein Angebot |
16,500
Verfügbar auf Lager
|
Nexperia | MOSFET N-channel 80 V 107 mo FET | 15 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 11.8 A | 89.7 mOhms | 1.7 V | 6.2 nC | Enhancement |
1 / 1 Seite
