- Hersteller :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
3,980
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Chan 60V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 10.7 A | 50 mOhms | Enhancement | |||||
|
Ein Angebot |
5,899
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 12V Enh Mode FET | 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 10.7 A | 7 mOhms | 350 mV | 50.4 nC | Enhancement | |||
|
Ein Angebot |
17,000
Verfügbar auf Lager
|
Nexperia | MOSFET N-channel TrenchMOS logic level FET | 10 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 10.7 A | 30 mOhms | 1 V | Enhancement |
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