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| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
3,000
Verfügbar auf Lager
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Toshiba | MOSFET Small Signal MOSFET | +/- 10 V, +/- 8 V | SMD/SMT | UF6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.6 A, - 1.5 A | 247 mOhms, 430 mOhms | 350 mV, - 300 mV | 7.5 nC, 6.4 nC | Enhancement |
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