- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
731
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT 150V 171 5.9mOhm 151nC Qg | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 171 A | 4.8 mOhms | 151 nC | ||||||
|
|
|
Ein Angebot |
238
Verfügbar auf Lager
|
Infineon / IR | MOSFET N-CHANNEL 100+ | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 171 A | 4.8 mOhms | 3 V | 227 nC | Enhancement | ||
|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET SO8FL 30V 191A 2MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 171 A | 2 mOhms | 1.5 V to 2.5 V | 83.6 nC | |||
|
|
Ein Angebot |
800
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET Hi Intg PWM contrlr Green-Mode | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 171 A | 3.9 mOhms | 4.5 V | 102 nC | Enhancement |
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