- Hersteller :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
13,771
Verfügbar auf Lager
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Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement | ||
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Ein Angebot |
3,628
Verfügbar auf Lager
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Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement | ||
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Ein Angebot |
540
Verfügbar auf Lager
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Microchip Technology | MOSFET 20V 2Ohm | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 2 Ohms | Enhancement | ||||
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siehe | Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement |
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