- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
7 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
4,397
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET PT5 150/25V Pch Pwr Trench MOSFET | +/- 25 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 22 A | 42 mOhms | - 4 V | 63 nC | Enhancement | PowerTrench | ||
|
|
Ein Angebot |
2,000
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 22 A | 0.007 Ohms | - 2.5 V | 113 nC | Enhancement | TrenchFET | ||
|
|
Ein Angebot |
800
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET P-Chan, -100V, -22A 0.125HM@VGS=-10V | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 22 A | 125 mOhms | Enhancement | QFET | ||||
|
|
Ein Angebot |
781
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFET P-Channel 2.9 mOhm -30V -160A | SMD/SMT | DirectFET-MX | Reel | 2 Channel | Si | P-Channel | - 30 V | - 22 A | 2.32 mOhms | Directfet | ||||||||
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|
|
Ein Angebot |
798
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 22 A | 125 mOhms | Enhancement | |||||
|
|
Ein Angebot |
30
Verfügbar auf Lager
|
IXYS | MOSFET -22.0 Amps -500V 0.260 Rds | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 500 V | - 22 A | 260 mOhms | ||||||||||
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siehe | IXYS | MOSFET -22.0 Amps -150V 0.120 Rds | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 150 V | - 22 A | 120 mOhms |
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