- Hersteller :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V, 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 2.5 A, 2.5 A | 39 mOhms, 39 mOhms | 600 mV, 600 mV | 3.2 nC, 3.2 nC | Enhancement | ||
|
|
Ein Angebot |
5,485
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 1.5V Drive Nch+Pch MOSFET | +/- 10 V, +/- 10 V | SMD/SMT | TSST-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 2.5 A, 2.5 A | 52 mOhms, 49 mOhms | 300 mV, - 1 V | 3.6 nC, 12 nC | Enhancement | ||
|
|
|
Ein Angebot |
1,845
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 1.5V Drive Nch+Nch MOSFET | 10 V, 10 V | SMD/SMT | TSST-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 2.5 A, 2.5 A | 52 mOhms, 52 mOhms | 300 mV, 300 mV | 3.6 nC, 36 nC | Enhancement | ||
|
|
|
siehe | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V, 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 2.5 A, 2.5 A | 39 mOhms, 39 mOhms | 600 mV, 600 mV | 3.2 nC, 3.2 nC | Enhancement |
1 / 1 Seite
