- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
3,122
Verfügbar auf Lager
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement | ||
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Ein Angebot |
3,000
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss TSOT26 | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement | ||
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Ein Angebot |
5,000
Verfügbar auf Lager
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement | ||
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Ein Angebot |
4,500
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement |
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