- Hersteller :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
4,678
Verfügbar auf Lager
|
Central Semiconductor | MOSFET 30V N-Ch Enh FET 8.0Vgs 1.78ID 100mW | 8 V | SMD/SMT | SOT-883L-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.78 A | 280 mOhms | 500 mV | 792 pC | Enhancement | |||
|
Ein Angebot |
30,000
Verfügbar auf Lager
|
Nexperia | MOSFET MOSFET | 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.78 A | 460 mOhms | Enhancement | |||||
|
Ein Angebot |
470,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS | SMD/SMT | X1-DFN1006-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 1.78 A | 360 mOhms |
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