- Hersteller :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET SO8FL 30V TR | 16 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35.5 A | 2.9 mOhms | Enhancement | |||||
|
Ein Angebot |
1,250
Verfügbar auf Lager
|
D3 | MOSFET 99 mOhm 650V Superjunction Power MOSFET in TO-220 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35.5 A | 90 mOhms | 2.3 V | 62.6 nC | Enhancement | |||
|
siehe | Nexperia | MOSFET N-CHANNEL TRENCHMOS STANDARD LEVEL F... | SMD/SMT | LFPAK56-5 | Reel | 1 Channel | Si | N-Channel | 75 V | 35.5 A | 23 mOhms |
1 / 1 Seite