- Mounting Style :
- Package / Case :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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siehe | Nexperia | MOSFET HIGH PERF TRENCHMOS | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 146 A | 5.4 mOhms | Enhancement | |||
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siehe | Nexperia | MOSFET HIGH PERF TRENCHMOS | 15 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 146 A | 5.4 mOhms | Enhancement | |||
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siehe | Nexperia | MOSFET HIGH PERF TRENCHMOS | 15 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 146 A | 5.4 mOhms | Enhancement |
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