- Hersteller :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
224
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NCH+NCH 4.5A 60V 4V DRIVE | 20 V, 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 4.5 A, 4.5 A | 95 mOhms, 95 mOhms | 1.2 V, 1.2 V | 14 nC, 14 nC | Enhancement | ||
|
|
Ein Angebot |
2,992
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 30V Nch+Nch Si MOSFET | 20 V, 20 V | SMD/SMT | TSMT-8 | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 4.5 A, 4.5 A | 25 mOhms, 25 mOhms | 1 V, 1 V | 8.4 nC, 8.4 nC | Enhancement | |||
|
|
|
Ein Angebot |
2,990
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 30V Nch+Nch Si MOSFET | 20 V, 20 V | SMD/SMT | TSMT-8 | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 4.5 A, 4.5 A | 56 mOhms, 56 mOhms | 1 V, 1 V | 3 nC, 3 nC | Enhancement | |||
|
|
siehe | ON Semiconductor | MOSFET | SMD/SMT | ECH-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 4.5 A, 4.5 A | 59 mOhms, 59 mOhms |
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