- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
6,733
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 13 A, 13 A | 62 mOhms, 62 mOhms | 2 V, 2 V | 11 nC, 11 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
156
Verfügbar auf Lager
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Nexperia | MOSFET BUK7K89-100E/LFPAK56D/REEL 7 | 20 V, 20 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 13 A, 13 A | 61 mOhms, 61 mOhms | 2.4 V, 2.4 V | 13.6 nC, 13.6 nC | Enhancement | |||
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siehe | Infineon Technologies | MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 13 A, 13 A | 62 mOhms, 62 mOhms | 2 V, 2 V | 11 nC, 11 nC | Enhancement | OptiMOS |
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