- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
3,420
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 10.3A 2577pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 10.3 A | 12.3 mOhms | 1.8 V | 26.6 nC | Enhancement | ||
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siehe | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 10.3A 2577pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 10.3 A | 12.3 mOhms | 1.8 V | 26.6 nC | Enhancement |
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