- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
6,700
Verfügbar auf Lager
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.7 A | 110 mOhms | - 1.2 V | - 1.3 nC | Enhancement | ||
|
|
Ein Angebot |
14,995
Verfügbar auf Lager
|
ON Semiconductor | MOSFET -30V -4.7A P-Channel | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.7 A | 68 mOhms | Enhancement | ||||
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siehe | Taiwan Semiconductor | MOSFET Dual 20V P channel MOSFET | +/- 12 V | SMD/SMT | SOP-8 | Reel | 2 Channel | Si | P-Channel | - 20 V | - 4.7 A | 60 mOhms | - 1.4 V |
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