- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
2,007
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET 4V DRIVE TYP N/P CH MID PWR MOSFET | +/- 20 V, +/- 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 9 A, 7 A | 15 mOhms, 21.5 mOhms | 1 V, - 2.5 V | 8.5 nC, 18 nC | Enhancement | ||
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siehe | ROHM Semiconductor | MOSFET TRANS MOSFET N/PCH 30V 9A/7A 8PIN | 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 9 A, 7 A | 18 mOhms | Enhancement | |||||
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siehe | ROHM Semiconductor | MOSFET SWITCHING Nch/Pch 4V | 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 9 A, 7 A | 18 mOhms | Enhancement |
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