- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
965
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SupreMOS 11A | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.8 A | 255 mOhms | SupreMOS | |||||||
|
|
Ein Angebot |
2,275
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SO-8 | - 20 V, + 30 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10.8 A | 12 mOhms | Enhancement | PowerTrench | ||||
|
|
Ein Angebot |
191
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SupreMOS 11A | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.8 A | 255 mOhms | SupreMOS | |||||||
|
|
Ein Angebot |
10,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Ch 30V Enh FET 20Vgss 1.18W 1415pF | 20 V, 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.8 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | PowerDI | ||
|
|
|
Ein Angebot |
400
Verfügbar auf Lager
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.8 A | 390 mOhms | 2.1 V | 64 nC | Enhancement | CoolMOS |
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