- Hersteller :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
994
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V N&P Chnl HDMOS | 20 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 2.3 A, - 2 A | 135 mOhms, 185 mOhms | Enhancement | |||||
|
Ein Angebot |
1,250
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N and P-Ch 30V 2.3A, -2A TSOP-6 | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 2.3 A, - 2 A | 88 mOhms, 67 mOhms | 1.6 V, - 1.5 V | - 5 nC, 1.5 nC | Enhancement |
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