- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
769
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 20.7A D2PAK-2 CoolMOS C3 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | Enhancement | CoolMOS | ||||
|
|
Ein Angebot |
2,109
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET 40V 10A 1.56W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 20.7 A | 0.0075 Ohms | 1.5 V | 62 nC | Enhancement | TrenchFET | ||
|
|
Ein Angebot |
2,550
Verfügbar auf Lager
|
Nexperia | MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET | SMD/SMT | LFPAK56-5 | Reel | 1 Channel | Si | N-Channel | 75 V | 20.7 A | 52 mOhms |
1 / 1 Seite
