- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
10 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
5,827
Verfügbar auf Lager
|
Infineon / IR | MOSFET Automotive MOSFET P 75A 120nC D2Pak | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 70 A | 20 mOhms | - 4 V | 120 nC | |||||
|
Ein Angebot |
2,739
Verfügbar auf Lager
|
ON Semiconductor | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 70 A | 10.4 mOhms | 79.5 nC | ||||||
|
Ein Angebot |
2,194
Verfügbar auf Lager
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 70 A | 5 mOhms | - 2 V | 91 nC | Enhancement | ||||
|
Ein Angebot |
778
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT PCh -55V -74A 20mOhm 120nC | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 70 A | 20 mOhms | - 4 V | 180 nC | |||||||
|
Ein Angebot |
1,562
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -70A DPAK-2 OptiMOS-P2 | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 70 A | 7.8 mOhms | OptiMOS | ||||||||||
|
Ein Angebot |
980
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -70A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 70 A | 9.1 mOhms | 54 nC | OptiMOS | |||||
|
Ein Angebot |
147
Verfügbar auf Lager
|
ON Semiconductor | MOSFET POWER MOSFET | 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 70 A | 13 mOhms | |||||||
|
Ein Angebot |
2,498
Verfügbar auf Lager
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 70 A | 3.5 mOhms | - 1 V | 175 nC | Enhancement | ||||
|
siehe | Infineon Technologies | MOSFET P-Ch -40V -70A I2PAK-3 OptiMOS-P2 | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 40 V | - 70 A | 9.1 mOhms | OptiMOS | |||||||||||
|
siehe | Infineon Technologies | MOSFET P-Ch -40V -70A TO220-3 OptiMOS-P2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | - 70 A | 9.1 mOhms | OptiMOS |
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