Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
SQJ980AEP-T1_GE3	1+ $0.6240 10+ $0.5000 100+ $0.3832 500+ $0.3388 3000+ $0.2496	Ein Angebot	PDF RFQ	2,235 Verfügbar auf Lager	Vishay Semiconductors	MOSFET Dual N-Channel 75V AEC-Q101 Qualified	+/- 20 V, +/- 20 V	SMD/SMT	PowerPAK-SO-8L-4	- 55 C	+ 175 C	Reel	2 Channel	Si	N-Channel	75 V, 75 V	17 A, 17 A	0.041 Ohms, 0.041 Ohms	1.5 V, 1.5 V	21 nC, 21 nC	Enhancement	TrenchFET
CSD87313DMS	1+ $0.6840 10+ $0.5840 100+ $0.4680 500+ $0.4080 2500+ $0.3140	Ein Angebot	PDF RFQ	2,500 Verfügbar auf Lager	Texas Instruments	MOSFET 30-V Dual N-Channel NexFET Power MOSFETs 8-WSO...	+/- 10 V, +/- 10 V	SMD/SMT	WSON-8	- 55 C	+ 150 C	Reel	2 Channel	Si	N-Channel	30 V, 30 V	17 A, 17 A	4.6 mOhms, 4.6 mOhms	0.6 V, 0.6 V	28 nC, 28 nC	Enhancement
CSD87313DMST	1+ $0.7880 10+ $0.6680 100+ $0.5360 250+ $0.5360 500+ $0.4680	Ein Angebot	PDF RFQ	250 Verfügbar auf Lager	Texas Instruments	MOSFET 30-V Dual N-Channel NexFET Power MOSFETs 8-WSO...	+/- 10 V, +/- 10 V	SMD/SMT	WSON-8	- 55 C	+ 150 C	Reel	2 Channel	Si	N-Channel	30 V, 30 V	17 A, 17 A	4.6 mOhms, 4.6 mOhms	0.6 V, 0.6 V	28 nC, 28 nC	Enhancement
NVMFD5877NLWFT3G	1+ $0.3640 10+ $0.3092 100+ $0.2376 500+ $0.2100 5000+ $0.1472	Ein Angebot siehe	PDF RFQ		ON Semiconductor	MOSFET Pwr MOSFET 60V 17A 39mOhmDual N-CH	20 V, 20 V	SMD/SMT	DFN-5x6-8	- 55 C	+ 175 C	Reel	2 Channel	Si	N-Channel	60 V, 60 V	17 A, 17 A	31 mOhms, 31 mOhms	1 V, 1 V	20 nC, 20 nC	Enhancement