- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
22 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
943
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 900 Volt 6 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.8 A | 2 Ohms | 46.5 nC | Enhancement | ||||
|
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Ein Angebot |
1,187
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.8 A | 2 Ohms | 46.5 nC | Enhancement | ||||
|
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Ein Angebot |
5,475
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 5.8 A | 45 mOhms | 1.3 V | 37.56 nC | Enhancement | |||
|
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Ein Angebot |
7,579
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET SO8 40V | SMD/SMT | SOIC-8 | Reel | 2 Channel | Si | N-Channel | 40 V | 5.8 A | 34 mOhms | |||||||||
|
|
Ein Angebot |
23,701
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 25V 5.8A 24mOhm 5.4 Qg | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 25 V | 5.8 A | 41 mOhms | 5.4 nC | |||||||
|
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Ein Angebot |
4,542
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.8 A | 350 mOhms | Enhancement | |||||
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Ein Angebot |
1,202
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5.8 A | 1.95 Ohms | Enhancement | |||||
|
|
Ein Angebot |
992
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.8 A | 2 Ohms | 46.5 nC | Enhancement | ||||
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|
Ein Angebot |
772
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch, 900V-1.56ohms Zener SuperMESH 5.8A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.8 A | 2 Ohms | 3.75 V | 46.5 nC | Enhancement | |||
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|
|
Ein Angebot |
2,313
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 26.5mOhm 10V 5.8A | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 21 mOhms | 600 mV | 20 nC | Enhancement | |||
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|
Ein Angebot |
844
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 21 mOhms | 1 V | 13.2 nC | Enhancement | |||
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Ein Angebot |
410
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT DUAL N/PCh 30V 5.8A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 5.8 A | 75 mOhms | 16.7 nC | |||||||
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Ein Angebot |
179
Verfügbar auf Lager
|
Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.8 A | 890 mOhms | 2.5 V | 11 nC | Enhancement | |||
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|
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Ein Angebot |
10,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 26.5mOhm 12Vgs 570pF | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 21 mOhms | 600 mV | 20 nC | Enhancement | |||
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siehe | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.8 A | 850 mOhms | 2.5 V | 11 nC | Enhancement | ||||
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Ein Angebot |
192,000
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET 3X3 20V 3.0A 9MOHM | 20 V | SMD/SMT | DFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.8 A | 9 mOhms | Enhancement | |||||
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siehe | Infineon Technologies | MOSFET N-Ch 700V 5.8A VSON-5 | 30 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 650 V | 5.8 A | 725 mOhms | 4 V | 20 nC | CoolMOS | ||||
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siehe | Taiwan Semiconductor | MOSFET 30V N channel MOSFET | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 30 mOhms | 1.5 V | 4.52 nC | |||||||
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siehe | Taiwan Semiconductor | MOSFET 30V N channel MOSFET | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 28 mOhms | 1.5 V | 9.7 nC | |||||||
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Ein Angebot |
2,500
Verfügbar auf Lager
|
Central Semiconductor | MOSFET SMD Small Sig Mosfet Dual N-Ch Enh Mode | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.8 A | 34 mOhms | 6.3 nC | Enhancement | ||||
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siehe | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5.8 A | 890 mOhms | 2.5 V | 11 nC | Enhancement | ||||
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Ein Angebot |
2,259
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT w/Schttky 30V 5.8A 35mOhm 18nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 60 mOhms | 18 nC |
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