- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
2,750
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 17.6 A | 34 mOhms | 1.9 V | 17 nC | UltraFET | |||
|
|
Ein Angebot |
1,828
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17.6 A | 4.6 mOhms | 2.3 V | 41 nC | Enhancement | PowerDI | ||
|
|
Ein Angebot |
1,180
Verfügbar auf Lager
|
Nexperia | MOSFET BUK9M52-40E/MLFPAK/REEL 7" Q1/ | 10 V | SMD/SMT | LFPAK33-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 17.6 A | 32.4 mOhms | 1.4 V | 4.5 nC | Enhancement | |||
|
|
|
siehe | Diodes Incorporated | MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17.6 A | 4.6 mOhms | 2.3 V | 41 nC | Enhancement | PowerDI |
1 / 1 Seite
