- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Channel Mode :
- Tradename :
- Ausgewählter Filter :
20 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
27,186
Verfügbar auf Lager
|
Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.6 A | 34 mOhms | 1 V | 7.2 nC | Enhancement | ||||
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Ein Angebot |
9,046
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 200V N-Channel MOSFET, UniFET | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7.6 A | 300 mOhms | 12 nC | ||||||||
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Ein Angebot |
17,778
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 40V N-Ch UltraFET PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 7.6 A | 21 Ohms | Enhancement | PowerTrench | |||||
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Ein Angebot |
3,361
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET SO-8 N-CH 80V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 7.6 A | 22 mOhms | Enhancement | PowerTrench | |||||
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Ein Angebot |
6,303
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT 60V 7.6A 26mOhm 21nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 7.6 A | 30 mOhms | 21 nC | ||||||||
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Ein Angebot |
3,520
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 7.6 A | 21 mOhms | 7.7 nC | PowerTrench | |||||
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Ein Angebot |
3,140
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 200V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7.6 A | 290 mOhms | Enhancement | ||||||
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Ein Angebot |
2,955
Verfügbar auf Lager
|
Infineon / IR | MOSFET 60V 1 N-CH HEXFET 26mOhms 21nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 7.6 A | 30 mOhms | 21 nC | Enhancement | |||||
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Ein Angebot |
955
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 560V 7.6A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 600 mOhms | Enhancement | CoolMOS | |||||
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Ein Angebot |
1,000
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 560V 7.6A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 600 mOhms | CoolMOS | |||||||||
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Ein Angebot |
479
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 500V 7.6A TO220-3 CoolMOS CE | 20 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 500 mOhms | 18.7 nC | CoolMOS | ||||||
|
Ein Angebot |
197
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 500V 5.4A TO220FP-3 CoolMOS CE | 20 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 500 mOhms | 18.7 nC | CoolMOS | ||||||
|
Ein Angebot |
474
Verfügbar auf Lager
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Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 720 mOhms | 2.5 V | 12.4 nC | Enhancement | CoolMOS | |||
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siehe | Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 720 mOhms | 2.5 V | 12.4 nC | Enhancement | CoolMOS | ||||
|
siehe | Infineon Technologies | MOSFET N-Ch 560V 7.6A I2PAK-3 | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 600 mOhms | CoolMOS | |||||||||||
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siehe | IXYS | MOSFET 20 Amps 600V | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.6 A | 200 mOhms | 3.5 V | Enhancement | CoolMOS | |||||
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siehe | Microchip Technology | MOSFET MOSFET DEPLETION MODE 500V 10 Ohms | SMD/SMT | TO-252-3 | + 150 C | Reel | Si | N-Channel | 500 V | 7.6 A | 10 Ohms | Depletion | ||||||||||
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Ein Angebot |
45
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 500V 24A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 450 mOhms | 2.5 V | 18.7 nC | Enhancement | CoolMOS | |||
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siehe | Infineon Technologies | MOSFET N-Ch 500V 7.6A DPAK-2 CoolMOS CE | 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 500 mOhms | 18.7 nC | CoolMOS | |||||||
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Ein Angebot |
18
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 500V 5A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 720 mOhms | 2.5 V | 12.4 nC | Enhancement | CoolMOS |
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