- Mounting Style :
- Package / Case :
- Ausgewählter Filter :
6 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | Tradename | |
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Ein Angebot |
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Verfügbar auf Lager
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Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 1.4 V | Enhancement | EPAD | ||
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siehe | Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 0.4 V | Enhancement | EPAD | |||
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siehe | Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 0.4 V | Enhancement | EPAD | |||
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siehe | Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 0.8 V | Enhancement | EPAD | |||
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siehe | Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 0.8 V | Enhancement | EPAD | |||
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siehe | Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 1.4 V | Enhancement | EPAD |
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