- Hersteller :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
2,052
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 265 A | 2.4 mOhms | Enhancement | PowerTrench | |||||
|
Ein Angebot |
1,160
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFET N-CH 40V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 265 A | 950 uOhms | 3.9 V | 127 nC | Enhancement | StrongIRFET | |||
|
Ein Angebot |
100
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 265 A | 2.5 mOhms | Enhancement | PowerTrench |
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