- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
1,487
Verfügbar auf Lager
|
Nexperia | MOSFET Dual N-channel 100 V 45 mo FET | 15 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V | 21 A | 38.3 mOhms | 1.7 V | 33.5 nC | Enhancement | |||
|
Ein Angebot |
1,679
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.9 mOhms | 1.7 V | 39 nC |
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