- Hersteller :
- Mounting Style :
- Package / Case :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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siehe | STMicroelectronics | MOSFET N-Ch Power Mosfet 600V STripFET D2PAK | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 21 A | 130 mOhms | ||||||||
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siehe | STMicroelectronics | MOSFET N-channel 600 V FDMesh | Through Hole | TO-247-3 | Tube | Si | N-Channel | 600 V | 21 A | 130 mOhms | |||||||||
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siehe | Shindengen | MOSFET 280V, 21A Hi-PotMOS MOSFET | 30 V | Through Hole | TO-220-3 | + 150 C | Bulk | 1 Channel | Si | N-Channel | 280 V | 21 A | 130 mOhms | 3.75 V | 20.5 nC | Enhancement |
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