- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,660
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 60V/20V Dual N-Ch PowerTrench MOSFET | 20 V, 20 V | SMD/SMT | PQFN-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 15 A, 15 A | 8.7 mOhms, 8.7 mOhms | 1 V, 1 V | 49 nC, 49 nC | Enhancement | Power Clip | ||
|
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Ein Angebot |
2,980
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 15 A, 15 A | 27 mOhms, 27 mOhms | 1.5 V, 1.5 V | 20 nC, 20 nC | Enhancement | |||
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Ein Angebot |
349
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET Dual N-Channel 60V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 15 A, 15 A | 0.047 Ohms, 0.047 Ohms | 1.5 V, 1.5 V | 12 nC, 12 nC | Enhancement | TrenchFET |
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