- Hersteller :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,575
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NCH+NCH 4V DRIVE SERIES | 20 V, 20 V | SMD/SMT | VEC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 3 A, 3 A | 116 mOhms, 116 mOhms | 1.2 V, 1.2 V | 10 nC, 10 nC | Enhancement | ||
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siehe | ROHM Semiconductor | MOSFET 4V Drive Nch+Nch MOSFET | 20 V, 20 V | SMD/SMT | TSST-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 3 A, 3 A | 51 mOhms, 51 mOhms | 1 V, 1 V | 2.5 nC, 2.5 nC | Enhancement |
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