- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
11 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
1,326
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch, 700V-1ohm Zener SuperMESH 7.5A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 7.5 A | 1.2 Ohms | 3.75 V | 48 nC | Enhancement | |||
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Ein Angebot |
36
Verfügbar auf Lager
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IXYS | MOSFET 8 Amps 1500V | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 7.5 A | 3.6 Ohms | 5 V | 250 nC | Enhancement | |||
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Ein Angebot |
898
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 1.2 Ohms | Enhancement | |||||
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Ein Angebot |
385
Verfügbar auf Lager
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ON Semiconductor | MOSFET 600V 0.95 OHM TO- 220FP | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 950 mOhms | 4.5 V | 39 nC | ||||
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Ein Angebot |
366
Verfügbar auf Lager
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Toshiba | MOSFET N-Ch MOS 7.5A 500V 35W 700pF 1.04 Ohm | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 7.5 A | 760 mOhms | 4.4 V | 16 nC | |||||
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Ein Angebot |
1,470
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 500 Volt 7.5 A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.5 A | 800 mOhms | Enhancement | |||||
|
Ein Angebot |
111
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 600V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 1.2 Ohms | Enhancement | |||||
|
Ein Angebot |
126
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 600V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 1.2 Ohms | Enhancement | |||||
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siehe | Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 1.2 Ohms | Enhancement | ||||||
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siehe | ROHM Semiconductor | MOSFET N-Channel Mosfet 200V, 7.5A, 10V gate drive | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7.5 A | 250 mOhms | 3.25 V | 15 nC | Enhancement | ||||
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siehe | STMicroelectronics | MOSFET N-Ch 700 Volt 7.5 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 7.5 A | 1.2 Ohms | Enhancement |
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