- Mounting Style :
- Rds On - Drain-Source Resistance :
-
- 1.07 Ohms (1)
- 1.25 Ohms (1)
- 1.48 Ohms (1)
- 1.7 Ohms (1)
- 1.88 Ohms (1)
- 120 mOhms (1)
- 160 mOhms (1)
- 180 mOhms (2)
- 199 mOhms (1)
- 2.45 Ohms (2)
- 210 mOhms (1)
- 230 mOhms (1)
- 240 mOhms (3)
- 250 mOhms (2)
- 270 mOhms (1)
- 280 mOhms (1)
- 299 mOhms (1)
- 330 mOhms (1)
- 370 mOhms (1)
- 450 mOhms (1)
- 480 mOhms (1)
- 570 mOhms (1)
- 72 mOhms (2)
- 720 mOhms (1)
- 80 mOhms (2)
- 860 mOhms (1)
- 88 mOhms (2)
- 90 mOhms (1)
- Tradename :
- Ausgewählter Filter :
36 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
804
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh M5 FET | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 550 V | 20.8 A | 80 mOhms | 5 V | 72 nC | |||||||
|
Ein Angebot |
973
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 550V 0.006 Ohm 33A MDmesh M5 FET | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 550 V | 20.8 A | 80 mOhms | 5 V | 72 nC | |||||||
|
Ein Angebot |
1,217
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 550V 13A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 550 V | 13 A | 250 mOhms | Enhancement | CoolMOS | |||||
|
Ein Angebot |
400
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 13 A | 280 mOhms | 3 V | 19.5 nC | |||||
|
Ein Angebot |
900
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 550V 12A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 550 V | 12 A | 299 mOhms | Enhancement | CoolMOS | |||||
|
Ein Angebot |
902
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 8 A | 450 mOhms | 2 V | 12 nC | Enhancement | ||||
|
Ein Angebot |
500
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 550V 13A I2PAK-3 CoolMOS CP | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 13 A | 250 mOhms | 27 nC | CoolMOS | |||||
|
Ein Angebot |
184
Verfügbar auf Lager
|
Toshiba | MOSFET N-Ch MOS 7.5A 550V 40W 800pF 1.07 Ohm | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 7.5 A | 1.07 Ohms | |||||||||||
|
Ein Angebot |
24
Verfügbar auf Lager
|
IXYS | MOSFET 60 Amps 550V 0.09 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 60 A | 88 mOhms | Enhancement | HyperFET | |||||
|
Ein Angebot |
4,981
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 550V 0.18 13A MDmesh M5 Power MOS | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 550 V | 13 A | 240 mOhms | ||||||||||
|
siehe | Toshiba | MOSFET N-Ch MOS 14A 550V 50W 2300pF 0.37 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 14 A | 370 mOhms | ||||||||||||
|
siehe | Toshiba | MOSFET N-Ch MOS 12.5A 550V 45W 1800pF 0.48 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 13.5 A | 480 mOhms | ||||||||||||
|
siehe | Toshiba | MOSFET N-Ch MOS 12A 550V 45W 1550pF 0.57 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 12 A | 570 mOhms | ||||||||||||
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siehe | Toshiba | MOSFET N-Ch MOS 5.5A 550V 35W 600pF 1.48 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 5.5 A | 1.48 Ohms | ||||||||||||
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siehe | Toshiba | MOSFET N-Ch 500V VDSS 700V 45W 1200pF 10A | SMD/SMT | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 10 A | 720 mOhms | ||||||||||||
|
siehe | Toshiba | MOSFET N-Ch MOS 8.5A 550V 40W 1050pF 0.86 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 8.5 A | 860 mOhms | ||||||||||||
|
siehe | Toshiba | MOSFET N-Ch MOS 7A 550V 35W 700pF 1.25 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 7 A | 1.25 Ohms | ||||||||||||
|
siehe | Toshiba | MOSFET N-Ch MOS 5A 550V 35W 540pF 1.7 Ohm | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 5 A | 1.7 Ohms | ||||||||||||
|
siehe | IXYS | MOSFET 60 Amps 550V 0.09 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 60 A | 88 mOhms | Enhancement | HyperFET | ||||||
|
siehe | IXYS | MOSFET 72 Amps 550V 0.07 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 72 A | 72 mOhms | Enhancement | HyperFET | ||||||
|
Ein Angebot |
470
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 550V 17A I2PAK-3 CoolMOS CP | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 17 A | 199 mOhms | 34 nC | CoolMOS | |||||
|
siehe | Toshiba | MOSFET N-Ch MOS 3.5A 550V 80W 380pF 2.45 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 550 V | 3.5 A | 2.45 Ohms | |||||||||||
|
siehe | Toshiba | MOSFET N-Ch MOS 16A 550V 50W 2600pF 0.33 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 16 A | 330 mOhms | ||||||||||||
|
siehe | Toshiba | MOSFET N-Ch MOS 4A 550V 35W 490pF 1.88 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 4 A | 1.88 Ohms | ||||||||||||
|
siehe | Toshiba | MOSFET N-Ch MOS 3.5A 550V 30W 380pF 2.45 Ohm | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 4 A | 2.45 Ohms | ||||||||||||
|
siehe | IXYS | MOSFET 44 Amps 550V 0.11 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 44 A | 120 mOhms | Enhancement | |||||||
|
siehe | IXYS | MOSFET 72 Amps 550 V 0.07 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 72 A | 72 mOhms | Enhancement | HyperFET | ||||||
|
siehe | IXYS | MOSFET 36 Amps 550V 0.16 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 36 A | 160 mOhms | Enhancement | HyperFET | ||||||
|
siehe | IXYS | MOSFET 36 Amps 550V 0.16 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 36 A | 180 mOhms | Enhancement | HyperFET | ||||||
|
siehe | IXYS | MOSFET 26 Amps 550V 0.23 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 26 A | 230 mOhms | Enhancement | HyperFET |
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